Invention Grant
US08390987B2 High energy density storage material device using nanochannel structure
有权
高能量密度储存材料器件采用纳米通道结构
- Patent Title: High energy density storage material device using nanochannel structure
- Patent Title (中): 高能量密度储存材料器件采用纳米通道结构
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Application No.: US13559095Application Date: 2012-07-26
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Publication No.: US08390987B2Publication Date: 2013-03-05
- Inventor: Richard A. Haight , Stephen M. Rossnagel
- Applicant: Richard A. Haight , Stephen M. Rossnagel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis Percello
- Main IPC: H01G9/00
- IPC: H01G9/00
Abstract:
A capacitor includes a plurality of nanochannels formed in a dielectric material. A conductive film is formed over interior surfaces of the nanochannels, and a charge barrier is formed over the conductive film. An electrolytic solution is disposed in the nanochannels. An electrode is coupled to the electrolytic solution in the nanochannels to form the capacitor.
Public/Granted literature
- US20120293915A1 HIGH ENERGY DENSITY STORAGE MATERIAL DEVICE USING NANOCHANNEL STRUCTURE Public/Granted day:2012-11-22
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