Invention Grant
- Patent Title: Capacitor substrate structure
- Patent Title (中): 电容器基板结构
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Application No.: US12545786Application Date: 2009-08-21
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Publication No.: US08390984B2Publication Date: 2013-03-05
- Inventor: Shur-Fen Liu , Meng-Huei Chen , Bih-Yih Chen , Yun-Tien Chen
- Applicant: Shur-Fen Liu , Meng-Huei Chen , Bih-Yih Chen , Yun-Tien Chen
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Priority: TW98118498A 20090604; TW98124978A 20090724
- Main IPC: H01G4/06
- IPC: H01G4/06 ; H01G4/20 ; H01G4/22

Abstract:
The disclosed is a capacitor substrate structure to reduce the high leakage current and low insulation resistance issue of organic/inorganic hybrid materials with ultra-high dielectric constant. The insulation layer, disposed between two conductive layers, includes multi-layered dielectric layers. At least one of the dielectric layers has high dielectric constant, including high dielectric constant ceramic powder and conductive powder evenly dispersed in organic resin. The other dielectric layers can be organic resin, or further include high dielectric constant ceramic powder dispersed in the organic resin. The substrate has an insulation resistance of about 50KΩ and leakage current of below 100 μAmp under operational voltage.
Public/Granted literature
- US20100309607A1 CAPACITOR SUBSTRATE STRUCTURE Public/Granted day:2010-12-09
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