Invention Grant
- Patent Title: Nanowire photodiodes
- Patent Title (中): 纳米线光电二极管
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Application No.: US12606947Application Date: 2009-10-27
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Publication No.: US08390705B2Publication Date: 2013-03-05
- Inventor: Alexandre M. Bratkovski , Vilatcheslav V. Osipov
- Applicant: Alexandre M. Bratkovski , Vilatcheslav V. Osipov
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Develoment Company, L.P.
- Current Assignee: Hewlett-Packard Develoment Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335
Abstract:
A photodiode includes a first electrode, a second electrode, and a nanowire comprising a semiconductor core and a semiconductor shell. The nanowire has a first end and a second end, the first end being in electrical contact with the first electrode and the second end being in contact with the second electrode.
Public/Granted literature
- US20110096218A1 NANOWIRE PHOTODIODES Public/Granted day:2011-04-28
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