Invention Grant
- Patent Title: High power RF switch with active device size tapering
- Patent Title (中): 大功率RF开关,有源器件尺寸逐渐减小
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Application No.: US12772903Application Date: 2010-05-03
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Publication No.: US08390395B2Publication Date: 2013-03-05
- Inventor: James M. Carroll , John R. Stanton , John G. Heston
- Applicant: James M. Carroll , John R. Stanton , John G. Heston
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Christie, Parker & Hale, LLP
- Main IPC: H01P1/15
- IPC: H01P1/15 ; H03L5/00

Abstract:
In an improved T/R switch configuration of a radio transceiver, the sizes of active switches coupled in series between the receive port and the common port are tapered such that the voltage referenced to ground across the active devices of the T/R switch is more evenly distributed among the switches which increases the power handling capability of that path. According to one embodiment of the present invention, an RF switch includes a plurality of first switches coupled in series between a transmit port and a common port for transmitting an RF signal, and a plurality of second switches coupled in series between a receive port and the common port. At least two of the plurality of second switches have different sizes such that the at least two of the second switches have substantially the same nodal impedance with respect to a frequency of the RF signal and an RF ground.
Public/Granted literature
- US20110267154A1 HIGH POWER RF SWITCH WITH ACTIVE DEVICE SIZE TAPERING Public/Granted day:2011-11-03
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