Invention Grant
- Patent Title: Power amplifier circuit
- Patent Title (中): 功率放大器电路
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Application No.: US13024740Application Date: 2011-02-10
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Publication No.: US08390382B2Publication Date: 2013-03-05
- Inventor: Ki Joong Kim , Youn Suk Kim , Seong Geon Kim , Jun Goo Won , Joong Jin Nam
- Applicant: Ki Joong Kim , Youn Suk Kim , Seong Geon Kim , Jun Goo Won , Joong Jin Nam
- Applicant Address: KR Gyunggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-do
- Agency: Lowe Hauptman Ham & Berner, LLP
- Priority: KR10-2010-0090081 20100914
- Main IPC: H03F3/00
- IPC: H03F3/00

Abstract:
There is provided a power amplifier circuit capable of improving cross isolation between a high frequency band power coupler and a low frequency band power coupler, by directly transmitting power to the high frequency band power coupler and the low frequency band power coupler from a power amplifier, and forming a predetermined inductance circuit or an LC resonance circuit in a line transmitting the power to the high frequency band power coupler. The power amplifier circuit may include a power amplifying unit supplied with power from the outside and amplifying an input signal, a coupling unit having a high frequency band power coupler and a low frequency band power coupler, and an isolation unit including a first power line and a second power line, wherein the first power line has an inductor blocking signal interference generated in a predetermined frequency band.
Public/Granted literature
- US20120062325A1 POWER AMPLIFIER CIRCUIT Public/Granted day:2012-03-15
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