Invention Grant
- Patent Title: High voltage switch circuit of semiconductor device
- Patent Title (中): 半导体器件的高压开关电路
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Application No.: US12982810Application Date: 2010-12-30
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Publication No.: US08390342B2Publication Date: 2013-03-05
- Inventor: Chae Kyu Jang
- Applicant: Chae Kyu Jang
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2009-0135618 20091231; KR10-2010-0125006 20101208
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00

Abstract:
A high voltage switch circuit of a semiconductor device includes a buffer circuit configured to output a control signal in response to an input signal and a boost circuit configured to output a block selection signal to an output terminal by connecting a current path between a voltage supply node and the output terminal in response to the control signal, and to block the current path in case where the control signal falls from a high voltage level to a low voltage level.
Public/Granted literature
- US20110156796A1 HIGH VOLTAGE SWITCH CIRCUIT OF SEMICONDUCTOR DEVICE Public/Granted day:2011-06-30
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