Invention Grant
- Patent Title: Semiconductor apparatus and breakdown voltage control method of the same
- Patent Title (中): 半导体装置和击穿电压控制方法相同
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Application No.: US12875643Application Date: 2010-09-03
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Publication No.: US08390336B2Publication Date: 2013-03-05
- Inventor: Takashi Tahata
- Applicant: Takashi Tahata
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-206657 20090908
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
A semiconductor apparatus operates based on a first voltage, a second voltage lower than the first voltage, and a third voltage in between the first and second voltages, and includes an output circuit including at least one transistor where a signal having an amplitude ranging from the second to first voltages is input to a gate, and a control circuit that generates a first control signal controlling a gate voltage of a transistor included in the output circuit, a second control signal controlling a voltage in a back-gate region of the transistor, and a third control signal controlling a voltage in a deep well region. The control circuit sets a voltage difference between the first and second control signals to be equal to or smaller than the larger one of a voltage difference between the first and third voltages and a voltage difference between the second and third voltages.
Public/Granted literature
- US20110057705A1 SEMICONDUCTOR APPARATUS AND BREAKDOWN VOLTAGE CONTROL METHOD OF THE SAME Public/Granted day:2011-03-10
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