Invention Grant
- Patent Title: Non-destructive determination of functionality of an unknown semiconductor device
- Patent Title (中): 未知半导体器件功能的非破坏性测定
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Application No.: US12899980Application Date: 2010-10-07
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Publication No.: US08390269B2Publication Date: 2013-03-05
- Inventor: Matthew S. Noell
- Applicant: Matthew S. Noell
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Pierce Atwood LLP
- Agent Joseph M. Maraia
- Main IPC: G01R31/00
- IPC: G01R31/00

Abstract:
Processes and systems for use in reverse engineering integrated circuits determine functionality through analysis of junctions responding to external radiation. Semiconductor devices include a number of p-n junctions grouped according to interconnected functional cells. A surface of the semiconductor device is illuminated by radiation, e.g., by a laser or an electron beam, producing electron-hole pairs. Such pairs give rise to detectable currents that can be used to determine locations of irradiated junctions. By scanning a surface of the device in such a manner, a layout of at least some of the junctions can be obtained. The layout can be used to identify functional cells according to a lookup process. By selectively providing input test vectors to the device and repeating the scanning process, first level functional cells can be identified. A netlist of interconnected functional cells can thus be determined and expanded by repeating the process with different test vectors.
Public/Granted literature
- US20120086432A1 NON-DESTRUCTIVE DETERMINATION OF FUNCTIONALITY OF AN UNKNOWN SEMICONDUCTOR DEVICE Public/Granted day:2012-04-12
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