Invention Grant
US08390269B2 Non-destructive determination of functionality of an unknown semiconductor device 有权
未知半导体器件功能的非破坏性测定

  • Patent Title: Non-destructive determination of functionality of an unknown semiconductor device
  • Patent Title (中): 未知半导体器件功能的非破坏性测定
  • Application No.: US12899980
    Application Date: 2010-10-07
  • Publication No.: US08390269B2
    Publication Date: 2013-03-05
  • Inventor: Matthew S. Noell
  • Applicant: Matthew S. Noell
  • Applicant Address: US MA Waltham
  • Assignee: Raytheon Company
  • Current Assignee: Raytheon Company
  • Current Assignee Address: US MA Waltham
  • Agency: Pierce Atwood LLP
  • Agent Joseph M. Maraia
  • Main IPC: G01R31/00
  • IPC: G01R31/00
Non-destructive determination of functionality of an unknown semiconductor device
Abstract:
Processes and systems for use in reverse engineering integrated circuits determine functionality through analysis of junctions responding to external radiation. Semiconductor devices include a number of p-n junctions grouped according to interconnected functional cells. A surface of the semiconductor device is illuminated by radiation, e.g., by a laser or an electron beam, producing electron-hole pairs. Such pairs give rise to detectable currents that can be used to determine locations of irradiated junctions. By scanning a surface of the device in such a manner, a layout of at least some of the junctions can be obtained. The layout can be used to identify functional cells according to a lookup process. By selectively providing input test vectors to the device and repeating the scanning process, first level functional cells can be identified. A netlist of interconnected functional cells can thus be determined and expanded by repeating the process with different test vectors.
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