Invention Grant
- Patent Title: Stacked crystal resonator and manufacturing method thereof
- Patent Title (中): 堆叠晶体谐振器及其制造方法
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Application No.: US12806968Application Date: 2010-08-25
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Publication No.: US08390176B2Publication Date: 2013-03-05
- Inventor: Kenji Shimao
- Applicant: Kenji Shimao
- Applicant Address: JP Tokyo
- Assignee: Nihon Dempa Kogyo Co., Ltd.
- Current Assignee: Nihon Dempa Kogyo Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Edwards Wildman Palmer LLP
- Agent Scott D. Wofsy
- Priority: JP2009-197113 20090827; JP2010-077207 20100330
- Main IPC: H01L41/00
- IPC: H01L41/00 ; H02N2/00

Abstract:
An object of the invention is to provide a method of manufacturing a stacked crystal resonator whereby a large number of stacked crystal resonators formed on a wafer can be easily broken away from the wafer, and the risk of damage to the outside surfaces and the like of the stacked crystal resonators is reduced. There is formed a framed crystal plate connected to a first wafer by a first support section, a cover connected to a second wafer by a second support section, and a base connected to a third wafer by a third support section, and a thickness of at least one of the first support section through third support section is thinner than a thickness the connected wafer.
Public/Granted literature
- US20110049093A1 Stacked crystal resonator and manufacturing method thereof Public/Granted day:2011-03-03
Information query
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