Invention Grant
US08390127B2 Contact trenches for enhancing stress transfer in closely spaced transistors
有权
接触沟槽用于增强紧密间隔晶体管中的应力传递
- Patent Title: Contact trenches for enhancing stress transfer in closely spaced transistors
- Patent Title (中): 接触沟槽用于增强紧密间隔晶体管中的应力传递
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Application No.: US12469972Application Date: 2009-05-21
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Publication No.: US08390127B2Publication Date: 2013-03-05
- Inventor: Andy Wei , Jan Hoentschel , Heike Salz
- Applicant: Andy Wei , Jan Hoentschel , Heike Salz
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102008030852 20080630
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
Scalability of a strain-inducing mechanism on the basis of a stressed dielectric overlayer may be enhanced by forming a single stress-inducing layer in combination with contact trenches, which may shield a significant amount of a non-desired stress component in the complementary transistor, while also providing a strain component in the transistor width direction when the contact material may be provided with a desired internal stress level.
Public/Granted literature
- US20090321837A1 CONTACT TRENCHES FOR ENHANCING STRESS TRANSFER IN CLOSELY SPACED TRANSISTORS Public/Granted day:2009-12-31
Information query
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