Invention Grant
US08390124B2 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings
有权
半导体装置及半导体装置的制造方法，包括用于连接第一和第二布线的布线孔和开关孔
- Patent Title: Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings
- Patent Title (中): 半导体装置及半导体装置的制造方法，包括用于连接第一和第二布线的布线孔和开关孔
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Application No.: US12656728Application Date: 2010-02-16
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Publication No.: US08390124B2Publication Date: 2013-03-05
- Inventor: Naoya Inoue , Yoshihiro Hayashi , Kishou Kaneko
- Applicant: Naoya Inoue , Yoshihiro Hayashi , Kishou Kaneko
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009/34117 20090217
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L29/32 ; H01L29/74 ; H01L31/111 ; H01L29/423 ; H01L29/49
Abstract:
Provided is a semiconductor device including a substrate, and a first wiring layer, a second wiring layer, and a switch via formed on the substrate. The first wiring layer has first wiring formed therein and the second wiring layer has second wiring formed therein. The switch via connects the first wiring and the second wiring. The switch via includes at least at its bottom a switch element including a resistance change layer. A resistance value of the resistance change layer changes according to a history of an electric field applied thereto.
Public/Granted literature
- US20100207093A1 Semiconductor device and method of manufacturing semiconductor device Public/Granted day:2010-08-19
Information query
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