Invention Grant
- Patent Title: Sputtering targets including excess cadmium for forming a cadmium stannate layer
- Patent Title (中): 溅射靶,包括用于形成镉锡酸盐层的过量镉
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Application No.: US13235780Application Date: 2011-09-19
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Publication No.: US08390122B2Publication Date: 2013-03-05
- Inventor: Scott Daniel Feldman-Peabody
- Applicant: Scott Daniel Feldman-Peabody
- Applicant Address: US CO Arvada
- Assignee: Primestar Solar, Inc.
- Current Assignee: Primestar Solar, Inc.
- Current Assignee Address: US CO Arvada
- Agency: Dority & Manning, P.A.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.
Public/Granted literature
- US20120000776A1 SPUTTERING TARGETS INCLUDING EXCESS CADMIUM FOR FORMING A CADMIUM STANNATE LAYER Public/Granted day:2012-01-05
Information query
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