Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US12913748Application Date: 2010-10-27
-
Publication No.: US08390120B2Publication Date: 2013-03-05
- Inventor: Kwang-Jin Moon , Pil-Kyu Kang , Dae-Lok Bae , Gil-Heyun Choi , Byung-Lyul Park , Dong-Chan Lim , Deok-Young Jung
- Applicant: Kwang-Jin Moon , Pil-Kyu Kang , Dae-Lok Bae , Gil-Heyun Choi , Byung-Lyul Park , Dong-Chan Lim , Deok-Young Jung
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agent Monica H. Choi
- Priority: KR10-2010-0061080 20100628
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure.
Public/Granted literature
- US20110316168A1 Semiconductor Device and Method of Fabricating the Same Public/Granted day:2011-12-29
Information query
IPC分类:
