Invention Grant
- Patent Title: High voltage switching devices and process for forming same
- Patent Title (中): 高压开关器件及其形成工艺
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Application No.: US13428039Application Date: 2012-03-23
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Publication No.: US08390101B2Publication Date: 2013-03-05
- Inventor: Jeffrey S. Flynn , George R. Brandes , Robert P. Vaudo
- Applicant: Jeffrey S. Flynn , George R. Brandes , Robert P. Vaudo
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Jenkins, Wilson, Taylor & Hunt, P.A.
- Agent Vincent K. Gustafson
- Main IPC: H01L29/20
- IPC: H01L29/20
Abstract:
The present invention relates to various switching device structures including Schottky diode, P-N diode, and P-I-N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers of low dopant concentration ( 2 KV).
Public/Granted literature
- US20120181547A1 HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME Public/Granted day:2012-07-19
Information query
IPC分类:
