Invention Grant
- Patent Title: Interconnection substrate having first and second insulating films with an adhesion enhancing layer therebetween
- Patent Title (中): 互连基板具有第一和第二绝缘膜，其间具有粘合增强层
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Application No.: US12862140Application Date: 2010-08-24
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Publication No.: US08390099B2Publication Date: 2013-03-05
- Inventor: Shirou Ozaki , Yoshihiro Nakata , Tadahiro Imada , Yasushi Kobayashi
- Applicant: Shirou Ozaki , Yoshihiro Nakata , Tadahiro Imada , Yasushi Kobayashi
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: Si—CXHY—Si General Formula (1) where y is equal to 2x and is an even integer.
Public/Granted literature
- US20100320618A1 INTERCONNECTION SUBSTRATE, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2010-12-23
Information query
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