Invention Grant
- Patent Title: Adjustable holding voltage ESD protection device
- Patent Title (中): 可调保持电压ESD保护装置
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Application No.: US12952641Application Date: 2010-11-23
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Publication No.: US08390096B2Publication Date: 2013-03-05
- Inventor: Hsin-Yen Hwang
- Applicant: Hsin-Yen Hwang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
An electrostatic discharge (ESD) protection structure comprises a bipolar PNP transistor having an emitter formed by a first high voltage P type implanted region disposed underneath a first P+ region and a collector formed by a second high voltage P type implanted region disposed underneath a second P+ region. The ESD protection structure can have an adjustable threshold voltage by controlling the distance between the first high voltage P type implanted region and the second high voltage P type implanted region. Based upon a basic ESD protection structure, the ESD protection device can provide a reliable ESD protection for semiconductor devices having different voltage ratings.
Public/Granted literature
- US20120119330A1 Adjustable Holding Voltage ESD Protection Device Public/Granted day:2012-05-17
Information query
IPC分类:
