Invention Grant
- Patent Title: MEMS sensor
- Patent Title (中): MEMS传感器
-
Application No.: US13067303Application Date: 2011-05-23
-
Publication No.: US08390084B2Publication Date: 2013-03-05
- Inventor: Goro Nakatani , Mizuho Okada , Nobuhisa Yamashita
- Applicant: Goro Nakatani , Mizuho Okada , Nobuhisa Yamashita
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2008-156937 20080616
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
The MEMS sensor according to the present invention includes a diaphragm. In the diaphragm, an angle formed by two straight lines connecting supporting portions and the center of a main portion with one another respectively is set to satisfy the relation of the following formula (1): (A2/A1)/(B2/B1)≧1 (1) A2: maximum vibrational amplitude of the diaphragm in a case of working a physical quantity of a prescribed value on the diaphragm A1: maximum vibrational amplitude of the diaphragm in a case of working the physical quantity on the diaphragm in an omitting structure obtained by omitting one of the supporting portions from the diaphragm B2: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm B1: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm in the omitting structure
Public/Granted literature
- US20110227177A1 MEMS sensor Public/Granted day:2011-09-22
Information query
IPC分类: