Invention Grant
- Patent Title: Transistor with dopant-bearing metal in source and drain
- Patent Title (中): 在源极和漏极中具有掺杂剂的金属的晶体管
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Application No.: US12245526Application Date: 2008-10-03
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Publication No.: US08390080B2Publication Date: 2013-03-05
- Inventor: Hong-Jyh Li , Nirmal Chaudhary
- Applicant: Hong-Jyh Li , Nirmal Chaudhary
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A transistor and method of manufacturing thereof. A gate dielectric and gate are formed over a workpiece, and the source and drain regions of a transistor are recessed. The recesses are filled with a dopant-bearing metal, and a low-temperature anneal process is used to form doped regions within the workpiece adjacent the dopant-bearing metal regions. A transistor having a small effective oxide thickness and a well-controlled junction depth is formed.
Public/Granted literature
- US20090026555A1 Transistor with Dopant-Bearing Metal in Source and Drain Public/Granted day:2009-01-29
Information query
IPC分类:
