Invention Grant
- Patent Title: Electrostatic discharge protection device and electrostatic discharge protection circuit thereof
- Patent Title (中): 静电放电保护装置及其静电放电保护电路
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Application No.: US13080662Application Date: 2011-04-06
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Publication No.: US08390070B2Publication Date: 2013-03-05
- Inventor: Wei-Fan Chen
- Applicant: Wei-Fan Chen
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
The ESD protection device includes a substrate, a well, a first doped region and a second doped region. The substrate has a first conductive type, and the substrate is electrically connected to a first power node. The well has a second conductive type, and is disposed in the substrate. The first doped region has the first conductive type, and is disposed in the well. The first doped region and the well are electrically connected to a second power node. The second doped region has the second conductive type, and is disposed in the substrate. The second doped region is in a floating state.
Public/Granted literature
- US20120256229A1 Electrostatic discharge protection device and Electrostatic discharge protection circuit thereof Public/Granted day:2012-10-11
Information query
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