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US08390051B2 Methods of forming semiconductor device structures and semiconductor device structures including a uniform pattern of conductive lines 有权
形成半导体器件结构的方法和包括均匀导电线图案的半导体器件结构

  • Patent Title: Methods of forming semiconductor device structures and semiconductor device structures including a uniform pattern of conductive lines
  • Patent Title (中): 形成半导体器件结构的方法和包括均匀导电线图案的半导体器件结构
  • Application No.: US12844560
    Application Date: 2010-07-27
  • Publication No.: US08390051B2
    Publication Date: 2013-03-05
  • Inventor: Andrew Bicksler
  • Applicant: Andrew Bicksler
  • Applicant Address: US ID Boise
  • Assignee: Micron Technology, Inc.
  • Current Assignee: Micron Technology, Inc.
  • Current Assignee Address: US ID Boise
  • Agency: TraskBritt
  • Main IPC: H01L29/788
  • IPC: H01L29/788
Methods of forming semiconductor device structures and semiconductor device structures including a uniform pattern of conductive lines
Abstract:
Methods of forming semiconductor device structures are disclosed. One method comprises forming a plurality of loops of a conductive material. Each loop of the plurality of loops comprises a uniform pattern. In one embodiment, a portion of the conductive material is removed from at least one location in each loop of the plurality of loops. Contacts are formed to the conductive material. A semiconductor device structure is also disclosed.
Abstract(Chinese):

公开了形成半导体器件结构的方法。 一种方法包括形成导电材料的多个环。 多个回路中的每个回路包括均匀的图案。 在一个实施例中，导电材料的一部分从多个环的每个环中的至少一个位置去除。 触点形成为导电材料。 还公开了半导体器件结构。

Public/Granted literature
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
H01L29/788 ......带有浮栅的
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