Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12823574Application Date: 2010-06-25
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Publication No.: US08390050B2Publication Date: 2013-03-05
- Inventor: Tomohiro Hirai
- Applicant: Tomohiro Hirai
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2009-175192 20090728
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/423 ; H01L21/28 ; H01L21/336
Abstract:
A semiconductor device has a first-conductivity-type-channel MOSFET formed on a semiconductor substrate, wherein the first-conductivity-type-channel MOSFET is typically a P-channel MOSFET, and is composed of a gate insulating film and a gate electrode provided over the semiconductor substrate, the gate electrode contains a metal gate electrode provided over the gate insulating film, a metal oxide film provided over the metal gate electrode, and another metal gate electrode provided over metal oxide film.
Public/Granted literature
- US20110024845A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-02-03
Information query
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