Invention Grant
US08390043B2 Solid-state imaging device with stress-relieving silicide blocking layer and electronic apparatus comprising said solid-state device
有权
具有应力消除硅化物阻挡层的固态成像装置和包括所述固态装置的电子装置
- Patent Title: Solid-state imaging device with stress-relieving silicide blocking layer and electronic apparatus comprising said solid-state device
- Patent Title (中): 具有应力消除硅化物阻挡层的固态成像装置和包括所述固态装置的电子装置
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Application No.: US12852736Application Date: 2010-08-09
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Publication No.: US08390043B2Publication Date: 2013-03-05
- Inventor: Keji Tatani
- Applicant: Keji Tatani
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2008-110669 20080421
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113 ; H01L21/00
Abstract:
A solid-state imaging device is provided. The solid-state imaging device includes a pixel section, a peripheral circuit section, a silicide blocking layer formed in the pixel section except for part or whole of an area above an isolation portion in the pixel section, and a metal-silicided transistor formed in the peripheral circuit section.
Public/Granted literature
- US20100295107A1 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME AND ELECTRONIC APPARATUS Public/Granted day:2010-11-25
Information query
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