Invention Grant
US08390021B2 Semiconductor light-emitting device, light-emitting module, and illumination device 有权
半导体发光装置,发光模块和照明装置

  • Patent Title: Semiconductor light-emitting device, light-emitting module, and illumination device
  • Patent Title (中): 半导体发光装置,发光模块和照明装置
  • Application No.: US13143178
    Application Date: 2010-06-01
  • Publication No.: US08390021B2
    Publication Date: 2013-03-05
  • Inventor: Hideo Nagai
  • Applicant: Hideo Nagai
  • Applicant Address: JP Osaka
  • Assignee: Panasonic Corporation
  • Current Assignee: Panasonic Corporation
  • Current Assignee Address: JP Osaka
  • Priority: JP2009-142573 20090615
  • International Application: PCT/JP2010/003660 WO 20100601
  • International Announcement: WO2010/146783 WO 20101223
  • Main IPC: H01L33/38
  • IPC: H01L33/38 H01L33/50
Semiconductor light-emitting device, light-emitting module, and illumination device
Abstract:
A semiconductor light-emitting device having a substrate on which a semiconductor multilayer film is disposed, the semiconductor multilayer film having a layered structure in which a first conductive layer, a light-emitting layer and a second conductive layer are layered above the substrate from bottom to top in the stated order, and being divided into portions by grooves extending perpendicular to the substrate, each portion having a diode structure and serving as a light-emitting element 12, each light-emitting element 12 having a hole 22 in a central portion thereof in plan view, the hole 22 penetrating through the second conductive layer 18 and the light-emitting layer 16 and reaching the first conductive layer 14, and comprising: a first electrode 24 inserted in the hole 22 and having a columnar shape, one end thereof being connected to the first conductive layer 14 at the bottom of the hole 22, and the other end protruding from an opening of the hole 22; and a second electrode 26 formed on the second conductive layer 18 and having an annular shape surrounding the opening of the hole 22.
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