Invention Grant
- Patent Title: Light emitting device, semiconductor device, and method of fabricating the devices
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Application No.: US12430609Application Date: 2009-04-27
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Publication No.: US08390019B2Publication Date: 2013-03-05
- Inventor: Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Mayumi Mizukami
- Applicant: Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Mayumi Mizukami
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2001-228353 20010727; JP2001-300021 20010928
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing elements, is formed on a substrate, bonded to a supporting member, and debonded from the substrate. A thin film is thereafter formed on the debonded layer. The debonded layer with the thin film is adhered to a transfer member. Cracks caused in the debonded layer at the time of debonding are thereby repaired. As the thin film in contact with the debonded layer, a film having thermal conductivity, e.g., film of aluminum nitride or aluminum nitroxide is used. This film dissipates heat from the elements and has the effect of preventing deformation and change in quality of the transfer member, e.g., a plastic substrate.
Public/Granted literature
- US20090302339A1 Light Emitting Device, Semiconductor Device, and Method of Fabricating the Devices Public/Granted day:2009-12-10
Information query
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