Invention Grant
- Patent Title: Method to reduce dislocation density in silicon using stress
- Patent Title (中): 减少硅中位错密度的方法
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Application No.: US12892370Application Date: 2010-09-28
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Publication No.: US08389999B2Publication Date: 2013-03-05
- Inventor: Anthony Buonassisi , Mariana Bertoni , Ali Argon , Sergio Castellanos , Alexandria Fecych , Douglas Powell , Michelle Vogl
- Applicant: Anthony Buonassisi , Mariana Bertoni , Ali Argon , Sergio Castellanos , Alexandria Fecych , Douglas Powell , Michelle Vogl
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Gesmer Updegrove LLP
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.
Public/Granted literature
- US20110073869A1 METHOD TO REDUCE DISLOCATION DENSITY IN SILICON USING STRESS Public/Granted day:2011-03-31
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