Invention Grant
- Patent Title: Polysilicon thin film transistor having trench type copper bottom gate structure and method of making the same
- Patent Title (中): 具有沟槽型铜底栅结构的多晶硅薄膜晶体管及其制造方法
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Application No.: US13182625Application Date: 2011-07-14
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Publication No.: US08389994B2Publication Date: 2013-03-05
- Inventor: Seung Ki Joo
- Applicant: Seung Ki Joo
- Agency: Cantor Colburn LLP
- Priority: KR10-2010-0133127 20101223
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L31/036 ; H01L21/00
Abstract:
Provided is a polysilicon thin film transistor having a trench type bottom gate structure using copper and a method of making the same. The polysilicon thin film transistor includes: a transparent insulation substrate; a seed pattern that is formed in a pattern corresponding to that of a gate electrode on the transparent insulation substrate, and that is used to form the gate electrode; a trench type guide portion having a trench type contact window in which an upper portion of the seed pattern is exposed; the gate electrode that is formed by electrodepositing copper on a trench of the exposed seed pattern; a gate insulation film formed on the upper portions of the gate electrode and the trench type guide portion, respectively; and a polysilicon layer in which a channel region, a source region and a drain region are formed on the upper portion of the gate insulation film.
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Information query
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