Invention Grant
US08389993B2 Display device having a buffer layer formed over a channel protective layer
有权
具有形成在通道保护层上的缓冲层的显示装置
- Patent Title: Display device having a buffer layer formed over a channel protective layer
- Patent Title (中): 具有形成在通道保护层上的缓冲层的显示装置
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Application No.: US13361998Application Date: 2012-01-31
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Publication No.: US08389993B2Publication Date: 2013-03-05
- Inventor: Satoshi Kobayashi , Ikuko Kawamata , Koji Dairiki , Shigeki Komori , Toshiyuki Isa , Shunpei Yamazaki
- Applicant: Satoshi Kobayashi , Ikuko Kawamata , Koji Dairiki , Shigeki Komori , Toshiyuki Isa , Shunpei Yamazaki
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2007-227073 20070831
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/10 ; H01L27/12
Abstract:
A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.
Public/Granted literature
- US20120129288A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2012-05-24
Information query
IPC分类:
