Invention Grant
US08389989B2 Transistor having oxide semiconductor layer and display utilizing the same
有权
具有氧化物半导体层的晶体管和利用其的显示器
- Patent Title: Transistor having oxide semiconductor layer and display utilizing the same
- Patent Title (中): 具有氧化物半导体层的晶体管和利用其的显示器
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Application No.: US12869278Application Date: 2010-08-26
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Publication No.: US08389989B2Publication Date: 2013-03-05
- Inventor: Shunpei Yamazaki , Toshinari Sasaki , Junichiro Sakata , Masashi Tsubuku
- Applicant: Shunpei Yamazaki , Toshinari Sasaki , Junichiro Sakata , Masashi Tsubuku
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-204801 20090904
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
Public/Granted literature
- US20110057186A1 TRANSISTOR AND DISPLAY DEVICE Public/Granted day:2011-03-10
Information query
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