Invention Grant
- Patent Title: Switching element and method for fabricating same
- Patent Title (中): 开关元件及其制造方法
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Application No.: US13127761Application Date: 2009-11-09
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Publication No.: US08389987B2Publication Date: 2013-03-05
- Inventor: Satoru Toguchi , Hiroyuki Endoh
- Applicant: Satoru Toguchi , Hiroyuki Endoh
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-287707 20081110
- International Application: PCT/JP2009/069033 WO 20091109
- International Announcement: WO2010/053171 WO 20100514
- Main IPC: H01L29/08
- IPC: H01L29/08

Abstract:
A switching element comprises a source electrode, a drain electrode arranged apart from the source electrode, an active layer in contact with the electrodes, and a gate electrode arranged apart from the source and drain electrodes and being in contact with the active layer with a gate insulating layer interposed therebetween. The active layer is formed of a dispersion film containing predetermined carbon nanotubes and a predetermined polyether compound.
Public/Granted literature
- US20110215315A1 SWITCHING ELEMENT AND METHOD FOR FABRICATING SAME Public/Granted day:2011-09-08
Information query
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