Invention Grant
- Patent Title: Nonvolatile memory device
- Patent Title (中): 非易失性存储器件
-
Application No.: US12795197Application Date: 2010-06-07
-
Publication No.: US08389968B2Publication Date: 2013-03-05
- Inventor: Katsuyuki Sekine , Yoshio Ozawa
- Applicant: Katsuyuki Sekine , Yoshio Ozawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-217441 20090918
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
According to one embodiment, a nonvolatile memory device comprises a plurality of first lines, a plurality of second lines, and memory cells. Each of the memory cells comprise a variable resistor, and a diode. The variable resistor includes a first metal oxide film and is configured to reversibly change resistance value by energy application. The diode includes a second metal oxide film and is connected in series to the variable resistor. The first metal oxide film has at least one of dielectric constant lower than that of the second metal oxide film and physical film thickness greater than that of the second metal oxide film.
Public/Granted literature
- US20110068312A1 NONVOLATILE MEMORY DEVICE Public/Granted day:2011-03-24
Information query
IPC分类:
