Invention Grant
- Patent Title: Multilayered circuit substrate with semiconductor device incorporated therein
- Patent Title (中): 并入其中的半导体器件的多层电路基板
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Application No.: US11529319Application Date: 2006-09-29
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Publication No.: US08389867B2Publication Date: 2013-03-05
- Inventor: Ryo Enomoto , Tadahiro Ohmi , Akihiro Morimoto
- Applicant: Ryo Enomoto , Tadahiro Ohmi , Akihiro Morimoto
- Applicant Address: JP Ogaki-shi JP Sendai-shi
- Assignee: Ibiden Co., Ltd.,National University Corporation Tohoku University
- Current Assignee: Ibiden Co., Ltd.,National University Corporation Tohoku University
- Current Assignee Address: JP Ogaki-shi JP Sendai-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-286440 20050930; JP2005-286441 20050930
- Main IPC: H05K1/16
- IPC: H05K1/16

Abstract:
For the purpose of providing a semiconductor element built-in type multilayered circuit board in which a semiconductor element is closely joined to a recess of an insulating substrate to effectively disperse heat generated from the semiconductor element through the insulating substrate at a working temperature region of the semiconductor element circuit board, to surely conduct an electrical connection of an electronic part such as semiconductor element or the like in a short wiring and to enable the high density mounting of semiconductor elements, miniaturization and increase of working speed, there is proposed a semiconductor element built-in type multilayered circuit board formed by laminating a plurality of semiconductor element built-in type boards each comprising an insulating substrate and a semiconductor element accommodated in a recess formed therein, characterized in that a difference between a linear expansion coefficient of the insulating substrate and a linear expansion coefficient of the semiconductor element in a temperature zone of 20-300° C. is less than 1×10−5/K.
Public/Granted literature
- US20070096289A1 A Multilayered circuit substrate with semiconductor device incorporated therein Public/Granted day:2007-05-03
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