One embodiment of the present invention provides a semiconductor device manufacturing method, including: performing a laser spike annealing, by irradiating light, whose wavelength is 10 μm to 11 μm, onto a semiconductor substrate including: an active area; a circuit pattern; and a dummy pattern formed at a position, whose distance from an end of the active area is equal to or more than 10 μm and equal to or less than 11 μm, at a pitch equal to or more than 10 nm and equal to or less than 510 nm, while setting an angle formed between an arrangement direction of the dummy pattern and a projection direction of the light to be equal to or more than 0° and equal to or less than 30°.