Invention Grant
- Patent Title: Method for producing a semiconductor wafer
- Patent Title (中): 半导体晶片的制造方法
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Application No.: US12778198Application Date: 2010-05-12
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Publication No.: US08389409B2Publication Date: 2013-03-05
- Inventor: Juergen Schwandner
- Applicant: Juergen Schwandner
- Applicant Address: DE Munich
- Assignee: Siltronic AG
- Current Assignee: Siltronic AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: DE102009030295 20090624
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
Semiconductor wafers are produced by a process of: a) providing a semiconductor wafer by cutting a silicon ingot into wafers; b) rounding the edge of the wafer, so that the wafer comprises plane surfaces on the frontside and backside and rounded oblique surfaces in the edge region; c) polishing the frontside and backside of the wafer, the frontside being polished by chemical-mechanical polishing using a polishing pad which is free of abrasive fixed in the polishing pad; backside polishing being carried out in three steps, using a polishing pad containing fixed abrasive which is pressed onto the backside of the wafer, a polishing agent free of solids introduced between the polishing pad and the backside of the wafer in the first step, a polishing agent containing abrasive being introduced in the second and third steps, a polishing pressure of 8-15 psi in the first and second steps being reduced to 0.5-5 psi in the third step.
Public/Granted literature
- US20100327414A1 Method For Producing A Semiconductor Wafer Public/Granted day:2010-12-30
Information query
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