Invention Grant
- Patent Title: Methods of patterning materials
- Patent Title (中): 图案材料的方法
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Application No.: US13491466Application Date: 2012-06-07
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Publication No.: US08389407B2Publication Date: 2013-03-05
- Inventor: Vishal Sipani , Baosuo Zhou , Ming-Chuan Yang
- Applicant: Vishal Sipani , Baosuo Zhou , Ming-Chuan Yang
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
Some embodiments include methods of forming openings. For instance, a construction may have a material over a plurality of electrically conductive lines. A plurality of annular features may be formed over the material, with the annular features crossing the lines. A patterned mask may be formed over the annular features, with the patterned mask leaving segments of the annular features exposed through a window in the patterned mask. The exposed segments of the annular features may define a plurality of openings, and such openings may be transferred into the material to form openings extending to the electrically conductive lines.
Public/Granted literature
- US20120244708A1 Methods Of Patterning Materials Public/Granted day:2012-09-27
Information query
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