Method of fabricating a self-aligning damascene memory structure

Invention Grant

US08389399B2 Method of fabricating a self-aligning damascene memory structure 有权

Title translation: 制造自对准大马士革记忆结构的方法

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Patent Title: Method of fabricating a self-aligning damascene memory structure
Patent Title (中): 制造自对准大马士革记忆结构的方法
Application No.: US12611087

Application Date: 2009-11-02
Publication No.: US08389399B2

Publication Date: 2013-03-05
Inventor: Kang-Jay Hsia , Calvin Li , Christopher Petti
Applicant: Kang-Jay Hsia , Calvin Li , Christopher Petti
Applicant Address: US CA Milpitas
Assignee: SanDisk 3D LLC
Current Assignee: SanDisk 3D LLC
Current Assignee Address: US CA Milpitas
Agency: Dugan & Dugan, PC
Main IPC: H01L21/4763
IPC: H01L21/4763

Method of fabricating a self-aligning damascene memory structure

Abstract:

A method of forming a memory cell is provided, the method including forming a first pillar-shaped element comprising a first semiconductor material, forming a first mold comprising an opening self-aligned with the first pillar-shaped element, and depositing a second semiconductor material in the opening to form a second pillar-shaped element above the first pillar-shaped element. Other aspects are also provided.

Abstract(Chinese):

提供一种形成存储单元的方法，该方法包括形成包括第一半导体材料的第一柱状元件，形成包括与第一柱状元件自对准的开口的第一模具，以及沉积第二半导体材料在所述开口中形成在所述第一柱状元件上方的第二柱状元件。还提供其他方面。

Public/Granted literature

US20100044756A1 METHOD OF FABRICATING A SELF-ALIGNING DAMASCENE MEMORY STRUCTURE Public/Granted day:2010-02-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）