Invention Grant
US08389394B2 Method of making semiconductor package having redistribution layer
有权
制造具有再分布层的半导体封装的方法
- Patent Title: Method of making semiconductor package having redistribution layer
- Patent Title (中): 制造具有再分布层的半导体封装的方法
-
Application No.: US13156043Application Date: 2011-06-08
-
Publication No.: US08389394B2Publication Date: 2013-03-05
- Inventor: Chih-Yi Huang , Hung-Hsiang Cheng
- Applicant: Chih-Yi Huang , Hung-Hsiang Cheng
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: McCracken & Frank LLC
- Priority: TW96148502A 20071218
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a substrate, a first passivation layer, a first metal layer, a second passivation layer, a second metal layer and a third metal layer. The substrate has a surface having at least one first pad and at least one second pad. The first passivation layer covers the surface of the substrate and exposes the first pad and the second pad. The first metal layer is formed on the first passivation layer and is electrically connected to the second pad. The second passivation layer is formed on the first metal layer and exposes the first pad and part of the first metal layer. The second metal layer is formed on the second passivation layer and is electrically connected to the first pad. The third metal layer is formed on the second passivation layer and is electrically connected to the first metal layer.
Public/Granted literature
- US20110237032A1 Semiconductor Package and Method for Making the Same Public/Granted day:2011-09-29
Information query
IPC分类:
