Invention Grant
- Patent Title: Method of impurity introduction and controlled surface removal
- Patent Title (中): 杂质引入和控制表面去除方法
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Application No.: US12101115Application Date: 2008-04-10
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Publication No.: US08389390B2Publication Date: 2013-03-05
- Inventor: Tzu-Yin Chiu
- Applicant: Tzu-Yin Chiu
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: C23C12/00
- IPC: C23C12/00
Abstract:
A method of introducing an impurity into a wafer surface is provided. The method comprises the steps of: low energy implantation of impurity into a surface of the wafer to generate an implanted dopant layer; and simultaneously removing an implanted surface of the implanted dopant layer to generate a doping profile with controlled areal impurity dosage.
Public/Granted literature
- US20080254602A1 METHOD OF IMPURITY INTRODUCTION AND Public/Granted day:2008-10-16
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