Invention Grant
- Patent Title: Semiconductor material manufacture
- Patent Title (中): 半导体材料制造
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Application No.: US13088863Application Date: 2011-04-18
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Publication No.: US08389385B2Publication Date: 2013-03-05
- Inventor: Nishant Sinha , Gurtej S. Sandhu , John Smythe
- Applicant: Nishant Sinha , Gurtej S. Sandhu , John Smythe
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Electronic apparatus, systems, and methods include a semiconductor layer bonded to a bulk region of a wafer or a substrate, in which the semiconductor layer can be bonded to the bulk region using electromagnetic radiation. Additional apparatus, systems, and methods are disclosed.
Public/Granted literature
- US20110193190A1 SEMICONDUCTOR MATERIAL MANUFACTURE Public/Granted day:2011-08-11
Information query
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