Invention Grant
- Patent Title: Methods of manufacturing a hybrid electrical contact
- Patent Title (中): 制造混合电接点的方法
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Application No.: US12970694Application Date: 2010-12-16
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Publication No.: US08389373B2Publication Date: 2013-03-05
- Inventor: Jonathan Doebler
- Applicant: Jonathan Doebler
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
Techniques for manufacturing an electronic device. In certain embodiments, a substrate includes a lower patterned layer that has a target conductor. A hybrid-vertical contact may be disposed directly on the target conductor. The hybrid vertical contact may include a lower-vertical contact directly on the target conductor and an upper-vertical contact directly on the lower-vertical contact. The upper-vertical contact may have an upper width that is greater than a lower width of the lower-vertical contact.
Public/Granted literature
- US20110086489A1 METHODS OF MANUFACTURING A HYBRID ELECTRICAL CONTACT Public/Granted day:2011-04-14
Information query
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