Trenched MOSFETS with improved gate-drain (GD) clamp diodes

Invention Grant

US08389354B2 Trenched MOSFETS with improved gate-drain (GD) clamp diodes 失效

Title translation: 具有改进的栅极 - 漏极（GD）钳位二极管的沟槽MOSFET

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Patent Title: Trenched MOSFETS with improved gate-drain (GD) clamp diodes
Patent Title (中): 具有改进的栅极 - 漏极（GD）钳位二极管的沟槽MOSFET
Application No.: US12383247

Application Date: 2009-03-19
Publication No.: US08389354B2

Publication Date: 2013-03-05
Inventor: Fwu-Iuan Hshieh
Applicant: Fwu-Iuan Hshieh
Applicant Address: KY British West Indies
Assignee: Force-MOS Technology Corporation
Current Assignee: Force-MOS Technology Corporation
Current Assignee Address: KY British West Indies
Agent Bo-In Lin
Main IPC: H01L21/8234
IPC: H01L21/8234

Trenched MOSFETS with improved gate-drain (GD) clamp diodes

Abstract:

A method for operating a semiconductor power device by in a forward conducting mode instead of an avalanche mode during a voltage fly-back during an inductive switch operation for absorbing a transient energy with less stress. The method includes a step of clamping the semiconductor power device with a Zener diode connected between a gate metal and a drain metal of the semiconductor power device to function as a gate-drain (GD) clamp diode with the GD clamp diode having an avalanche voltage lower than a source/drain avalanche voltage of the semiconductor power device whereby as the voltage fly-back inducing a drain voltage increase rapidly reaching the avalanche voltage of the GD clamp diode for generating the forward conducting mode.

Abstract(Chinese):

一种用于在感应开关操作期间在电压回扫期间以正向传导模式而不是雪崩模式操作半导体功率器件的方法，用于以较小的应力吸收瞬态能量。该方法包括用连接在半导体功率器件的栅极金属和漏极金属之间的齐纳二极管钳位半导体功率器件的步骤，用作具有雪崩电压的GD钳位二极管的栅极 - 漏极（GD）钳位二极管低于半导体功率器件的源极/漏极雪崩电压，由此当感应漏极电压的电压反复迅速增加达到GD钳位二极管的雪崩电压以产生正向导通模式时。

Public/Granted literature

US20090219657A1 Trenched mosfets with improved gate-drain (GD) clamp diodes Public/Granted day:2009-09-03

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺