Invention Grant
US08389346B2 Method and structure for establishing contacts in thin film transistor devices
有权
在薄膜晶体管器件中建立触点的方法和结构
- Patent Title: Method and structure for establishing contacts in thin film transistor devices
- Patent Title (中): 在薄膜晶体管器件中建立触点的方法和结构
-
Application No.: US13594507Application Date: 2012-08-24
-
Publication No.: US08389346B2Publication Date: 2013-03-05
- Inventor: Jurgen H. Daniel , Ana Claudia Arias , Michael Chabinyc
- Applicant: Jurgen H. Daniel , Ana Claudia Arias , Michael Chabinyc
- Applicant Address: US CA Palo Alto
- Assignee: Palo Alto Research Center Incorporated
- Current Assignee: Palo Alto Research Center Incorporated
- Current Assignee Address: US CA Palo Alto
- Agency: Fay Sharpe LLP
- Main IPC: H01L29/10
- IPC: H01L29/10

Abstract:
The roughness and structural height of printed metal lines is used to pin a fluid. This fluid deposits a top contact material which is connected to the bottom printed contacts through pinholes in the hydrophobic polymer layer. This results in a sandwich-like contact structure achieved in a self-aligned deposition process and having improved source-drain contact for all-additive printed circuits. In one form, the present technique is used for thin film transistor applications, but it may be applied to electrodes in general.
Public/Granted literature
- US20120322214A1 METHOD AND STRUCTURE FOR ESTABLISHING CONTACTS IN THIN FILM TRANSISTOR DEVICES Public/Granted day:2012-12-20
Information query
IPC分类: