Invention Grant
US08389322B2 Photodiode array, method of manufacturing the same, and radiation detector
有权
光电二极管阵列,制造方法及放射线检测器
- Patent Title: Photodiode array, method of manufacturing the same, and radiation detector
- Patent Title (中): 光电二极管阵列,制造方法及放射线检测器
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Application No.: US12656175Application Date: 2010-01-20
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Publication No.: US08389322B2Publication Date: 2013-03-05
- Inventor: Katsumi Shibayama
- Applicant: Katsumi Shibayama
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JPP2003-063891 20030310
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A theme is to prevent the generation of noise due to damage in a photodetecting portion in a mounting process in a photodiode array, a method of manufacturing the same, and a radiation detector. In a photodiode array, wherein a plurality of photodiodes (4) are formed in array form on a surface at a side of an n-type silicon substrate (3) onto which light to be detected is made incident and penetrating wirings (8), which pass through from the incidence surface side to the back surface side, are formed for the photodiodes (4), the photodiode array (1) is arranged with a transparent resin film (6), which covers the formed regions of the photodiodes (4) and transmits the light to be detected, provided at the incidence surface side.
Public/Granted literature
- US20100123081A1 Photodiode array, method of manufacturing the same, and radiation detector Public/Granted day:2010-05-20
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