Invention Grant
- Patent Title: Method for manufacturing semiconductor light-emitting apparatus
- Patent Title (中): 半导体发光装置的制造方法
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Application No.: US13403520Application Date: 2012-02-23
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Publication No.: US08389309B2Publication Date: 2013-03-05
- Inventor: Seiichiro Kobayashi
- Applicant: Seiichiro Kobayashi
- Applicant Address: JP Tokyo
- Assignee: Stanley Electric Co., Ltd.
- Current Assignee: Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick, PC
- Priority: JP2011-038451 20110224
- Main IPC: H01L31/18
- IPC: H01L31/18
Abstract:
There is provided a method for manufacturing a light-emitting element comprising a semiconductor layered structure of Group III-V compound semiconductor layers; the manufacturing method including a step of forming a projection/depression structure on a light extraction surface of the semiconductor layered structure using as an etchant an aqueous solution containing hydrobromic acid.
Public/Granted literature
- US20120220060A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING APPARATUS Public/Granted day:2012-08-30
Information query
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