Invention Grant
- Patent Title: Alpha alumina for the production of sapphire single crystal and method for producing the same
- Patent Title (中): 用于制造蓝宝石单晶的α-氧化铝及其制造方法
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Application No.: US13041833Application Date: 2011-03-07
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Publication No.: US08388929B2Publication Date: 2013-03-05
- Inventor: Hirotaka Ozaki , Shinji Fujiwara
- Applicant: Hirotaka Ozaki , Shinji Fujiwara
- Applicant Address: JP Tokyo
- Assignee: Sumitomo Chemical Company, Limited
- Current Assignee: Sumitomo Chemical Company, Limited
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-051427 20100309
- Main IPC: C01F7/00
- IPC: C01F7/00

Abstract:
An object of the present invention is to provide α alumina for the production of a sapphire single crystal, capable of producing a sapphire single crystal with high production efficiency; and a method for producing the same.Disclosed are α alumina for the production of a sapphire single crystal, including 100 parts by weight of α alumina (I) and 25 to 235 parts by weight of α alumina (II), wherein the α alumina (I) has a specific surface area of 0.1 to 5 m2/g and a bulk density of 1.5 g/cm3 or more, the α alumina (II) is composed of sintered particles and also has a specific surface area of 1 m2/g or less and a relative density of 85% or more, and each of the body particles has a volume of 0.01 cm3 or more; and a method for producing the same.
Public/Granted literature
- US20110223423A1 ALPH ALUMINA FOR THE PRODUCTION OF SAPPHIRE SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME Public/Granted day:2011-09-15
Information query
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