Invention Grant
- Patent Title: Method of manufacturing a silicon carbide single crystal
- Patent Title (中): 制造碳化硅单晶的方法
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Application No.: US13036101Application Date: 2011-02-28
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Publication No.: US08388752B2Publication Date: 2013-03-05
- Inventor: Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Akihiro Yauchi , Shinji Shimosaki
- Applicant: Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Akihiro Yauchi , Shinji Shimosaki
- Applicant Address: JP Osaka
- Assignee: Sumitomo Metal Industries, Ltd.
- Current Assignee: Sumitomo Metal Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: Clark & Brody
- Priority: JP2008-221852 20080829
- Main IPC: C30B9/00
- IPC: C30B9/00
Abstract:
A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×1017/cm3 and preferably less than 1×1017/cm3 and which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by SixCryTiz wherein x, y, and z (each in atomic percent) satisfy 0.50
Public/Granted literature
- US20110200833A1 METHOD OF MANUFACTURING A SILICON CARBIDE SINGLE CRYSTAL Public/Granted day:2011-08-18
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