Invention Grant
- Patent Title: Plasma processing unit
- Patent Title (中): 等离子处理装置
-
Application No.: US11632779Application Date: 2005-07-21
-
Publication No.: US08387560B2Publication Date: 2013-03-05
- Inventor: Caizhong Tian , Kiyotaka Ishibashi , Junichi Kitagawa , Toshihisa Nozawa
- Applicant: Caizhong Tian , Kiyotaka Ishibashi , Junichi Kitagawa , Toshihisa Nozawa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Smith Gambrell & Russell, LLP
- Priority: JP2004-216277 20040723
- International Application: PCT/JP2005/013404 WO 20050721
- International Announcement: WO2006/009213 WO 20060126
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306

Abstract:
The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.
Public/Granted literature
- US20080035058A1 Plasma Processing Unit Public/Granted day:2008-02-14
Information query
IPC分类: