Invention Grant
- Patent Title: Semiconductor manufacturing plant
- Patent Title (中): 半导体制造厂
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Application No.: US12278407Application Date: 2007-02-07
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Publication No.: US08387559B2Publication Date: 2013-03-05
- Inventor: Jiro Hiraiwa , Osamu Yoshimoto , Hiroshi Hayakawa , Tetsuro Tojo , Tsuneyuki Okabe , Takanobu Asano , Shinichi Wada , Ken Nakao , Hitoshi Kato
- Applicant: Jiro Hiraiwa , Osamu Yoshimoto , Hiroshi Hayakawa , Tetsuro Tojo , Tsuneyuki Okabe , Takanobu Asano , Shinichi Wada , Ken Nakao , Hitoshi Kato
- Applicant Address: JP Osaka-shi JP Tokyo
- Assignee: Toyo Tanso Co., Ltd.,Tokyo Electron Limited
- Current Assignee: Toyo Tanso Co., Ltd.,Tokyo Electron Limited
- Current Assignee Address: JP Osaka-shi JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-029299 20060207
- International Application: PCT/JP2007/052087 WO 20070207
- International Announcement: WO2007/091583 WO 20070816
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/52 ; C23F1/00 ; H01L21/306 ; C23C16/06 ; C23C16/22

Abstract:
Fluorine gas generators are connected with semiconductor manufacturing apparatuses through a gas supplying system including a storage tank that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators. When one or more of the on-site fluorine gas generators are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses from the storage tank storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and with superior cost performance.
Public/Granted literature
- US20100064969A1 SEMICONDUCTOR MANUFACTURING PLANT Public/Granted day:2010-03-18
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