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US08386890B2 Error correction for multilevel flash memory 有权
多级闪存的纠错

Error correction for multilevel flash memory
Abstract:
An integrated circuit is provided with an array of multilevel flash memory cells. In one embodiment these flash memory cells have a storage signal level which is Gray coded to output data bits thereby increasing the independence between bit errors. The error correction circuitry targets independent identical distributed error patterns. In another embodiment, the storage signal levels are read to generate n-bit symbols which are then subject to error correction with an error correction mechanism targeted at the error properties of those n-bit symbols. The data is read in sets of symbols such that the error correction targeted at those symbols will be more efficient.
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