Invention Grant
- Patent Title: Error correction for multilevel flash memory
- Patent Title (中): 多级闪存的纠错
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Application No.: US12585353Application Date: 2009-09-11
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Publication No.: US08386890B2Publication Date: 2013-02-26
- Inventor: Martinus Cornelis Wezelenburg , Thomas Kelshaw Conway
- Applicant: Martinus Cornelis Wezelenburg , Thomas Kelshaw Conway
- Applicant Address: GB Cambridge
- Assignee: ARM Limited
- Current Assignee: ARM Limited
- Current Assignee Address: GB Cambridge
- Agency: Nixon & Vanderhye P.C.
- Main IPC: G11C29/42
- IPC: G11C29/42 ; G11C29/54

Abstract:
An integrated circuit is provided with an array of multilevel flash memory cells. In one embodiment these flash memory cells have a storage signal level which is Gray coded to output data bits thereby increasing the independence between bit errors. The error correction circuitry targets independent identical distributed error patterns. In another embodiment, the storage signal levels are read to generate n-bit symbols which are then subject to error correction with an error correction mechanism targeted at the error properties of those n-bit symbols. The data is read in sets of symbols such that the error correction targeted at those symbols will be more efficient.
Public/Granted literature
- US20110066922A1 Error correction for multilevel flash memory Public/Granted day:2011-03-17
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