Invention Grant
US08386884B2 Memory apparatus with multi-level cells and operation method thereof
有权
具有多级单元的存储装置及其操作方法
- Patent Title: Memory apparatus with multi-level cells and operation method thereof
- Patent Title (中): 具有多级单元的存储装置及其操作方法
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Application No.: US12502353Application Date: 2009-07-14
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Publication No.: US08386884B2Publication Date: 2013-02-26
- Inventor: Chung-Kuang Chen
- Applicant: Chung-Kuang Chen
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C11/34

Abstract:
A memory apparatus and an operation method thereof are provided. The memory apparatus includes a plurality of multi-level cells and a controller. The controller encodes input data according to a target encoding code to generate a plurality of encoded subsets, and stores the encoded subsets into the multi-level cells. Thereafter, the controller could read data from the multi-level cells, perform an error correction procedure on the read data to correct and recover the read data as recovered data, and decode the recovered data according to the target encoding code. Consequently, sensing windows between threshold voltage distributions of the multi-level cells are expanded.
Public/Granted literature
- US20110016370A1 MEMORY APPARATUS AND OPERATION METHOD THEREOF Public/Granted day:2011-01-20
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