Invention Grant
- Patent Title: Adaptive parametric power amplifier protection circuit
- Patent Title (中): 自适应参数功率放大器保护电路
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Application No.: US12470418Application Date: 2009-05-21
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Publication No.: US08385854B2Publication Date: 2013-02-26
- Inventor: Aristotele Hadjichristos , Gurkanwal S. Sahota
- Applicant: Aristotele Hadjichristos , Gurkanwal S. Sahota
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Ramin Mobarhan
- Main IPC: H01Q11/12
- IPC: H01Q11/12 ; H04B1/04 ; H03G3/10

Abstract:
A device including a gain control element coupled prior to or within a radio frequency (RF) power amplifier (PA) with an adaptive parametric PA protection circuit is described. In an exemplary embodiment, the device includes a gain control element coupled prior to a radio frequency power amplifier with a power stage with corresponding transistor breakdown threshold values, having an adaptive parametric PA protection circuit configured to receive at least one power stage drain-source voltage parameter value, at least one power stage drain-gate voltage parameter value, and at least one power stage drain-source current parameter value, and including an adaptive parametric PA protection circuit having a first section for processing the parameter values and a second section for generating a gain correction signal to adjust the gain control element with optimal power added efficiency (PAE) for the power stage within the corresponding transistor breakdown threshold values.
Public/Granted literature
- US20110095826A1 ADAPTIVE PARAMETRIC POWER AMPLIFIER PROTECTION CIRCUIT Public/Granted day:2011-04-28
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